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| 2N3416 / 2N3417 Discrete POWER & Signal Technologies 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Collector-Emitter Voltage Value 50 50 5.0 500 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N3416 / 2N3417 625 5.0 83.3 200 Units mW mW/C C/W C/W (c) 1997 Fairchild Semiconductor Corporation 3416-3417, Rev B 2N3416 / 2N3417 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VCB = 18 V, IE = 0, TA = 100C VEB = 5.0 V, IC = 0 50 50 5.0 100 15 100 V V V nA A nA ON CHARACTERISTICS* hFE DC Current Gain VCE = 4.5 V, IC = 2.0 mA 2N3416 2N3417 IC = 50 mA, IB = 3.0 mA IC = 50 mA, IB = 3.0 mA 75 180 0.6 225 540 0.3 1.3 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V V SMALL SIGNAL CHARACTERISTICS hfe Small-Signal Current Gain IC = 2.0 mA, VCE = 4.5 V, f = 1.0 kHz 2N3416 2N3417 75 180 *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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